maximum ratings: (t a =25c unless otherwise noted) MJE710 mje711 mje712 symbol mje720 mje721 mje722 units collector-base voltage v cbo 40 60 80 v collector-emitter voltage v ceo 40 60 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 1.5 a base current i b 0.5 a power dissipation p d 1.25 w power dissipation (t c =25c) p d 20 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 100 c/w thermal resistance jc 6.25 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cev v ce =rated v ceo , v be(off) =1.5v 100 a i cev v ce =rated v ceo , v be(off) =1.5v (t c =125c) 500 a i ceo v ce =1/2 rated v ceo 500 a i ebo v eb =5.0v 1.0 ma bv ceo i c =50ma (MJE710, mje720) 40 v bv ceo i c =50ma (mje711, mje721) 60 v bv ceo i c =50ma (mje712, mje722) 80 v v ce(sat) i c =150ma, i b =15ma 0.15 v v ce(sat) i c =500ma, i b =50ma 0.4 v v ce(sat) i c =1.5a, i b =300ma 1.0 v v be(sat) i c =1.5a, i b =300ma 1.3 v v be(on) v ce =1.0v, i c =500ma 0.95 v h fe v ce =1.0v, i c =150ma 40 h fe v ce =1.0v, i c =500ma 20 h fe v ce =1.0v, i c =1.0a 8.0 complementary silicon power transistors to-126 case central semiconductor corp. tm r1 (16-september 2008) description: the central semiconductor MJE710, mje720 series types are complementary silicon power transistors designed for low power amplifier and medium speed switching aplications. marking: full part number MJE710 mje711 mje712 pnp mje720 mje721 mje722 npn
central semiconductor corp. tm MJE710 mje711 mje712 pnp mje720 mje721 mje722 npn complementary silicon power transistors r1 (16-september 2008) to-126 case - mechanical outline lead code: 1) emitter 2) collector 3) base marking: full part number
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